Author:
Tran Binh Tinh,Maeda Noritoshi,Jo Masafumi,Inoue Daishi,Kikitsu Tomoka,Hirayama Hideki
Publisher
Springer Science and Business Media LLC
Reference21 articles.
1. Matsumura, T. et al. Multi-band RF filter integrating different modes of AlN resonator by CMOS-compatible process, IEEE Internation Ultrasonics Symposium (IUS), Rome, Italy, September 20–23, 2141–2144 (2009).
2. Luong, T.-T. et al. Performance improvements of AlGaN/GaN HEMTs by strain modification and unintentional carbon incorporation. Electronic Materials Letters 11, 217–224 (2015).
3. Luong, T.-T. et al. Barrier strain and carbon incorporation-engineered performance improvements for AlGaN/GaN high electron mobility transistors. Chemical Vapor Deposition 21, 33–40 (2015).
4. Piazza, G. et al. Piezoelectric aluminum nitride thin films for microelectromechanical systems. MRS Bulletin 37, 1051–1061 (2012).
5. Hirayama, H. et al. 231–261 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire. Applied Physics Letters 91, 071901 (2007).
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