Особенности проявления квантового размерного эффекта в явлениях переноса в тонких пленках висмута на подложках из слюды
Author:
Демидов Е.В.1,
Грабов В.М.1,
Комаров В.А.1,
Крушельницкий А.Н.1,
Суслов А.В.1,
Суслов М.В.1
Affiliation:
1. Российский государственный педагогический университет им. А.И. Герцена, Санкт-Петербург, Россия
Abstract
The dependences of the resistivity, magnetoresistance,and Hall coefficient on the sample thickness were studied forthin bismuth films on mica at 77 K. We discovered quantum sizeoscillations of electrical and galvanomagnetic properties for filmswith the thickness less than 50 nm. The charge carrier free path isestimated. The reasons for deviation of the observed experimentaldependences from the simple quantum size effect theory in thesemimetal films are discussed.
Publisher
Ioffe Institute Russian Academy of Sciences
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics
Cited by
2 articles.
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