Self-Formed Exchange Bias of Switchable Conducting Filaments in NiO Resistive Random Access Memory Capacitors-Reference-Cited by-同舟云学术

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Self-Formed Exchange Bias of Switchable Conducting Filaments in NiO Resistive Random Access Memory Capacitors

Published:2010-04-30 Issue:6 Volume:4 Page:3288-3292
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Son Jong Yeog¹,Kim Cheol Hwan²,Cho Jin Hyoung²,Shin Young-Han³,Jang Hyun M.¹

Affiliation:

1. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea

2. RCDAMP and Department of Physics Education, Pusan National University, Pusan 609-735, Korea

3. Departments of Physics and Chemistry, University of Ulsan, Ulsan 680-749, Korea

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn100323x

Reference28 articles.

1. Reversible Electrical Switching Phenomena in Disordered Structures

2. Nanoionics-based resistive switching memories

3. Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors

4. Nonvolatile Memory with Multilevel Switching: A Basic Model

5. Hysteretic current–voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3∕SrTi0.99Nb0.01O3

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2. Giant room-temperature modulation of magnetic anisotropy by electric fields in CoFeB/(011)-PMN-PT multiferroic heterostructures with two distinct initial magnetic anisotropies;Journal of Applied Physics;2023-08-18

3. Electric control of NiFe/NiO exchange bias through resistive switching under zero magnetic field;Journal of Materials Science: Materials in Electronics;2023-02

4. Spontaneous creation of exchange bias in epitaxially self-assembled nanostructures driven by inhomogeneous structural transformation;Applied Surface Science;2023-02

5. Conductive filament nanostructures and their magnetization reversal in NiO resistive switching memory cells;Materials Science and Engineering: B;2022-09

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