Band Gap Tunability in Semiconductor Nanocrystals by Strain: Size and Temperature Effect-Reference-Cited by-同舟云学术

Band Gap Tunability in Semiconductor Nanocrystals by Strain: Size and Temperature Effect

Published:2011-03-18 Issue:14 Volume:115 Page:6462-6466
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Zhu Ziming¹,Zhang Ai¹,Ouyang Gang¹²,Yang Guowei³

Affiliation:

1. Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of the Ministry of Education, Department of Physics, Hunan Normal University, Changsha 410081, Hunan, People's Republic of China

2. School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore

3. State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Physics & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, People's Republic of China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp2009644

Reference48 articles.

1. Semiconductor Nanocrystals: Structure, Properties, and Band Gap Engineering

2. Tuning the optical and electronic properties of colloidal nanocrystals by lattice strain

3. High-pressure behavior ofSnO2nanocrystals

4. Atomistic origin of lattice strain on stiffness of nanoparticles

5. Surface Energy of Nanostructural Materials with Negative Curvature and Related Size Effects

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