Formamide Mediated, Air-Brush Printable, Indium-Free Soluble Zn–Sn–O Semiconductors for Thin-Film Transistor Applications-Reference-Cited by-同舟云学术

Formamide Mediated, Air-Brush Printable, Indium-Free Soluble Zn–Sn–O Semiconductors for Thin-Film Transistor Applications

Published:2014-10-22 Issue:21 Volume:6 Page:18429-18434
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kim Seong Jip¹,Jeon Hye-Ji²,Oh Sang-Jin¹,Lee Sun Sook¹,Choi Youngmin¹,Park Jin-Seong²,Jeong Sunho¹

Affiliation:

1. Advanced Materials Division, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeongro, Yuseong-gu, Daejeon 305-600, Republic of Korea

2. Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro Seongdong-gu, Seoul, 133-719, Republic of Korea

Funder

Ministry of Science, ICT and Future Planning

Korea Evaluation Institute of Industrial Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am505457t

Reference30 articles.

1. Low-temperature, solution-processed metal oxide thin film transistors

2. Overview of electroceramic materials for oxide semiconductor thin film transistors

3. Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

4. High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors

5. Solution-deposited Zr-doped AlOx gate dielectrics enabling high-performance flexible transparent thin film transistors

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