Origin of Yellow-Band Emission in Epitaxially Grown GaN Nanowire Arrays-Reference-Cited by-同舟云学术

Origin of Yellow-Band Emission in Epitaxially Grown GaN Nanowire Arrays

Published:2014-08-01 Issue:16 Volume:6 Page:14159-14166
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Liu Baodan¹,Yuan Fang¹,Dierre Benjamin²,Sekiguchi Takashi²,Zhang Song³,Xu Yongkuan³,Jiang Xin¹

Affiliation:

1. Shenyang National Laboratory for Materials Science, Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72 Wenhua Road, Shenyang 110016, China

2. World Premier International (WPI) Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305−0044, Japan

3. The 46th Research Institute of China Electronics Technology Group Corporation, No. 26, Dongting Road, Tianjin 300220, China

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Liaoning Province

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am5034878

Reference39 articles.