Dynamics and Energetics of Reconstruction at the Si(100) Surface-Reference-Cited by-同舟云学术

Dynamics and Energetics of Reconstruction at the Si(100) Surface

Published:2014-10-24 Issue:44 Volume:118 Page:25614-25619
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Guo Chun-Sheng¹²,Hermann Klaus²,Zhao Yong¹³

Affiliation:

1. Key Laboratory of Advanced Technology of Materials (Ministry of Education), Superconductivity and New Energy R&D Center, Southwest Jiaotong University, Chengdu, P. R. China

2. Department of Inorganic Chemistry, Fritz-Haber-Institut der MPG, Faradayweg 4-6, D-14195 Berlin, Germany

3. School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW, Australia

Funder

Ministry of Education of the People's Republic of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp509095t

Reference19 articles.

1. Schlier, R. E.; Farnsworth, E.InSemiconductor Surface Physics;University of Pennsylvania Press:Philadelphia, PA, 1957; p3.

2. Low Voltage Electron Diffraction Study of the Oxidation and Reduction of Silicon

3. Si(001) Dimer Structure Observed with Scanning Tunneling Microscopy

4. Direct observation of an increase in buckled dimers on Si(001) at low temperature

5. Evidence of asymmetric dimers down to 40 K at the clean Si(100) surface

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