Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO<sub>2</sub>/HZO) Bilayer Heterostructures and High-Pressure Annealing-Reference-Cited by-同舟云学术

Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO₂/HZO) Bilayer Heterostructures and High-Pressure Annealing

Published:2022-09-15 Issue:38 Volume:14 Page:43463-43473
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Gaddam Venkateswarlu¹,Kim Giuk¹,Kim Taeho¹,Jung Minhyun¹,Kim Chaeheon¹,Jeon Sanghun¹^ORCID

Affiliation:

1. School of Electrical Engineering, Korea Advanced Institute of Science & Technology, Daejeon 34141, Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c08691

Reference50 articles.

1. Morphotropic Phase Boundary of Hf1–xZrxO2 Thin Films for Dynamic Random Access Memories

2. Future of dynamic random-access memory as main memory

3. Prospective of Semiconductor Memory Devices: from Memory System to Materials

4. 1T-1C Dynamic Random Access Memory Status, Challenges, and Prospects

5. Recent advances in the understanding of high-k dielectric materials deposited by atomic layer deposition for dynamic random-access memory capacitor applications

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