Tafel-Kinetics-Controlled High-Speed Switching in a Electrochemical Graphene Field-Effect Transistor-Reference-Cited by-同舟云学术

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Tafel-Kinetics-Controlled High-Speed Switching in a Electrochemical Graphene Field-Effect Transistor

Published:2022-10-11 Issue:42 Volume:14 Page:47991-47998
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Li Shaorui¹,Yu Chenglin¹,Wang Yongchao¹,Zhang Ke¹²,Jiang Kaili¹²,Wang Yayu¹³⁴,Zhang Jinsong¹³⁴^ORCID

Affiliation:

1. State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China

2. Tsinghua-Foxconn Nanotechnology Research Center, Department of Physics, Tsinghua University, Beijing 100084, China

3. Frontier Science Center for Quantum Information, Beijing 100084, China

4. Hefei National Laboratory Hefei 230088, China

Funder

Ministry of Science and Technology of the People's Republic of China

Beijing Innovation Center for Future Chip

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c10640

Reference53 articles.

1. Two-dimensional gas of massless Dirac fermions in graphene

2. Experimental observation of the quantum Hall effect and Berry's phase in graphene

3. The rise of graphene

4. The electronic properties of graphene

5. Wafer-Scale Graphene Integrated Circuit

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gate-Controlled Neuromorphic Functional Transition in an Electrochemical Graphene Transistor;Nano Letters;2024-01-26

2. Dielectric response and excitations of hydrogenated free-standing graphene;Carbon Trends;2023-09

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