Ultralow Dark Currents in Avalanche Amorphous Selenium Photodetectors Using Solution-Processed Quantum Dot Blocking Layer-Reference-Cited by-同舟云学术

Ultralow Dark Currents in Avalanche Amorphous Selenium Photodetectors Using Solution-Processed Quantum Dot Blocking Layer

Author:

Kannan Haripriya¹,Stavro Jann²,Mukherjee Atreyo³,Léveillé Sébastien⁴,Kisslinger Kim⁵,Guan Lizhu¹⁶,Zhao Wei⁷,Sahu Ayaskanta¹^ORCID,Goldan Amir H.⁷

Affiliation:

1. Department of Chemical and Biomolecular Engineering, Tandon School of Engineering, New York University, Brooklyn, New York, United States

2. Department of Biomedical Engineering, College of Engineering and Applied Sciences, Stony Brook University, Stony Brook, New York United States

3. Department of Electrical Engineering, College of Engineering and Applied Sciences, Stony Brook University, Stony Brook, New York, United States

4. Analogic Canada, Montreal, Quebec H4R 2P1, Canada

5. Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, United States

6. Department of Material Science and Engineering, Harbin University of Science and Technology, Harbin, China

7. Department of Radiology, School of Medicine, Stony Brook University, Stony Brook, New York, United States

Funder

Schlumberger Foundation

National Institute of Biomedical Imaging and Bioengineering

China Scholarship Council

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

Reference37 articles.

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