Capping Layer Effects on Sb<sub>2</sub>S<sub>3</sub>-Based Reconfigurable Photonic Devices-Reference-Cited by-同舟云学术

Capping Layer Effects on Sb₂S₃-Based Reconfigurable Photonic Devices

Published:2023-09-01 Issue:9 Volume:10 Page:3203-3214
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Teo Ting Yu¹²^ORCID,Li Nanxi²^ORCID,Tobing Landobasa Y. M.²^ORCID,Tong Amy Sen Kay²^ORCID,Ng Doris Keh Ting²^ORCID,Ren Zhihao³^ORCID,Lee Chengkuo³^ORCID,Lee Lennon Yao Ting²^ORCID,Simpson Robert E.⁴^ORCID

Affiliation:

1. Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, Singapore

2. Institute of Microelectronics (IME), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-02, Singapore 138634, Singapore

3. Center for Intelligent Sensors and MEMS, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore

4. School of Engineering, University of Birmingham, Edgbaston, Birmingham B15 2TT, United Kingdom

Funder

Ministry of Education - Singapore

Institute of Microelectronics

Institute of Materials Research and Engineering

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.3c00600

Reference68 articles.