High-Bandwidth Zero-Biased Waveguide-Integrated p-n Homojunction Graphene Photodetectors on Silicon for a Wavelength Band of 1.55 μm and Beyond-Reference-Cited by-同舟云学术

High-Bandwidth Zero-Biased Waveguide-Integrated p-n Homojunction Graphene Photodetectors on Silicon for a Wavelength Band of 1.55 μm and Beyond

Published:2023-09-26 Issue:10 Volume:10 Page:3621-3628
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Yu Laiwen¹,Guo Jingshu¹²,Xiang Hengtai¹,Liu Chaoyue¹,Li Yuanrong¹,Liu Liu¹^ORCID,Dai Daoxin¹²³^ORCID

Affiliation:

1. State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou 310058, China

2. Jiaxing Key Laboratory of Photonic Sensing & Intelligent Imaging, Intelligent Optics & Photonics Research Center, Jiaxing Research Institute, Zhejiang University, Jiaxing 314000, China

3. Ningbo Research Institute, Zhejiang University, Ningbo 315100, China

Funder

National Key Research and Development Program of China

National Science Fund for Distinguished Young Scholars

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

The Fundamental Research Funds for the Central Universities

Leading Innovative and Entrepreneur Team Introduction Program of Zhejiang

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials