Direct Electrochemical Functionalization of Graphene Grown on Cu Including the Reaction Rate Dependence on the Cu Facet Type-Reference-Cited by-同舟云学术

Direct Electrochemical Functionalization of Graphene Grown on Cu Including the Reaction Rate Dependence on the Cu Facet Type

Published:2023-10-02 Issue:19 Volume:17 Page:18914-18923
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Kim Minhyeok¹²,Joo Se Hun³^ORCID,Wang Meihui¹,Menabde Sergey G.⁴^ORCID,Luo Da¹^ORCID,Jin Sunghwan¹³^ORCID,Kim Hyeongjun¹³,Seong Won Kyung¹,Jang Min Seok⁴^ORCID,Kwak Sang Kyu⁵^ORCID,Lee Sun Hwa¹^ORCID,Ruoff Rodney S.¹²³⁶^ORCID

Affiliation:

1. Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea

2. Department of Chemistry, School of Natural Science, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea

3. School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea

4. School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea

5. Department of Chemical and Biological Engineering, Korea University, Seoul 02841, Republic of Korea

6. Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea

Funder

Institute for Basic Science

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.3c04138

Reference74 articles.

1. Fermi-Level Dependence of the Chemical Functionalization of Graphene with Benzoyl Peroxide

2. Graphene-based smart materials

3. Accurate electronic band gap of pure and functionalized graphane from GW calculations

4. Aryl Functionalization as a Route to Band Gap Engineering in Single Layer Graphene Devices

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