Surface Charge Transfer Doping via Transition Metal Oxides for Efficient p-Type Doping of II–VI Nanostructures-Reference-Cited by-同舟云学术

Surface Charge Transfer Doping via Transition Metal Oxides for Efficient p-Type Doping of II–VI Nanostructures

Published:2016-11-04 Issue:11 Volume:10 Page:10283-10293
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Xia Feifei¹,Shao Zhibin¹,He Yuanyuan¹²,Wang Rongbin¹³,Wu Xiaofeng¹,Jiang Tianhao¹,Duhm Steffen¹,Zhao Jianwei²,Lee Shuit-Tong¹,Jie Jiansheng¹

Affiliation:

1. Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, People’s Republic of China

2. Materials and Textile Engineering College, Jiaxing University, Jiaxing 314001, Zhejiang People’s Republic of China

3. Institut für Physik, Humboldt-Universität zu Berlin, 12489 Berlin, Germany

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Jiangsu Province

Collaborative Innovation Center of Suzhou Nano Science and Technology

Priority Academic Program Development of Jiangsu Higher Education Institutions

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.6b05884

Reference81 articles.

1. High-Performance CdSe:In Nanowire Field-Effect Transistors Based on Top-Gate Configuration with High-κ Non-Oxide Dielectrics

2. CdSe Nanowire-Based Flexible Devices: Schottky Diodes, Metal–Semiconductor Field-Effect Transistors, and Inverters

3. Bright, multicoloured light-emitting diodes based on quantum dots

4. White Light-Emitting Diodes Based on Ultrasmall CdSe Nanocrystal Electroluminescence

5. Photoconductive Characteristics of Single-Crystal CdS Nanoribbons

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