Carbon Nanotube Self-Gating Diode and Application in Integrated Circuits-Reference-Cited by-同舟云学术

Carbon Nanotube Self-Gating Diode and Application in Integrated Circuits

Published:2016-06-23 Issue:7 Volume:10 Page:6737-6743
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Si Jia¹,Liu Lijun¹,Wang Fanglin¹,Zhang Zhiyong¹,Peng Lian-Mao¹

Affiliation:

1. Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People’s Republic of China

Funder

National Natural Science Foundation of China

Beijing Municipal Science and Technology Commission

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.6b02126

Reference54 articles.

1. Sze, S.Physics of Semiconductor Devices;Wiley:New York, 1981; pp90–101.

2. High-performance CMOS variability in the 65-nm regime and beyond

3. Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

4. An analytical model for ballistic diode based on asymmetric geometry

5. Electrostatic engineering of nanotube transistors for improved performance

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wafer-Scale Carbon Nanotubes Diodes Based on Dielectric-Induced Electrostatic Doping;ACS Nano;2024-03-05

2. Controlled synthesis, properties, and applications of ultralong carbon nanotubes;Nanoscale Advances;2024

3. Sustainable production of bio-propionic acid: synergy between vacancy and thermoelectron in MoS₂/MoO₃ composite-enhanced hydrodeoxygenation of lactic acid;Catalysis Science & Technology;2023

4. Two‐Terminal Self‐Gating Random‐Access Memory Based on Partially Aligned 2D Heterostructures;Advanced Electronic Materials;2022-07-07

5. Carbon Nanotube Dual-Material Gate Devices for Flexible Electronics;Nanoporous Carbons for Soft and Flexible Energy Devices;2022