Highly Sensitive Bulk Silicon Chemical Sensors with Sub-5 nm Thin Charge Inversion Layers-Reference-Cited by-同舟云学术

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Highly Sensitive Bulk Silicon Chemical Sensors with Sub-5 nm Thin Charge Inversion Layers

Published:2018-02-17 Issue:3 Volume:12 Page:2948-2954
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Fahad Hossain M.¹²³^ORCID,Gupta Niharika¹,Han Rui¹,Desai Sujay B.¹²³,Javey Ali¹²³^ORCID

Affiliation:

1. Electrical Engineering & Computer Sciences, University of California, Berkeley, California 94720, United States

2. Berkeley Sensor and Actuator Center, University of California, Berkeley, California 94720, United States

3. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

Funder

Bakar Fellows Program

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.8b00580

Reference31 articles.

1. Metal Oxide Nanostructures and Their Gas Sensing Properties: A Review

2. Ultrasensitive and highly selective gas sensors using three-dimensional tungsten oxide nanowire networks

3. Hydrogen Sensors and Switches from Electrodeposited Palladium Mesowire Arrays

4. Catalytically Activated Palladium@Platinum Nanowires for Accelerated Hydrogen Gas Detection

5. A hydrogen−sensitive MOS field−effect transistor

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