Understanding Grain Boundary Electrical Resistivity in Cu: The Effect of Boundary Structure-Reference-Cited by-同舟云学术

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Understanding Grain Boundary Electrical Resistivity in Cu: The Effect of Boundary Structure

Published:2021-10-04 Issue:10 Volume:15 Page:16607-16615
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Bishara Hanna¹^ORCID,Lee Subin¹²^ORCID,Brink Tobias¹,Ghidelli Matteo¹³^ORCID,Dehm Gerhard¹

Affiliation:

1. Max-Planck-Institut für Eisenforschung GmbH, 40237 Düsseldorf, Germany

2. Institute for Applied Materials (IAM), Karlsruhe Institute of Technology, 76344 Eggenstein-Leopoldshafen, Germany

3. Laboratoire des Sciences des Procédés et des Matériaux (LSPM), CNRS, Université Sorbonne Paris Nord, 93430 Villetaneuse, France

Funder

Alexander von Humboldt-Stiftung

H2020 European Research Council

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.1c06367

Reference57 articles.

1. A Proposal for a Novel Hybrid Interconnect Technology for the End of Roadmap

2. Resistivity dominated by surface scattering in sub-50 nm Cu wires

3. Surface and grain boundary scattering in nanometric Cu thin films: A quantitative analysis including twin boundaries

4. Epitaxial metals for interconnects beyond Cu

5. The search for the most conductive metal for narrow interconnect lines

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