Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors-Reference-Cited by-同舟云学术

Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors

Published:2021-03-25 Issue:4 Volume:15 Page:7340-7347
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Zou Jingyun¹,Cai Zhengyang¹,Lai Yongjue¹,Tan Junyang¹,Zhang Rongjie¹,Feng Simin¹,Wang Gang²,Lin Junhao²^ORCID,Liu Bilu¹^ORCID,Cheng Hui-Ming¹³^ORCID

Affiliation:

1. Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute & Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, P.R. China

2. Department of Physics, SUSTech Core Research Facilities, Southern University of Science and Technology, Shenzhen 518055, P.R. China

3. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P.R. China

Funder

National Natural Science Foundation of China

Guangdong Innovative and Entrepreneurial Research Team Program

Bureau of Industry and Information Technology of Shenzhen for the ?2017 Graphene Manufacturing Innovation Center Project?

Shenzhen Basic Research Project

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.1c00596

Reference38 articles.

1. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

2. Two-dimensional semiconductors for transistors

3. Chemical Vapor Deposition Growth and Applications of Two-Dimensional Materials and Their Heterostructures

4. Vertical Chemical Vapor Deposition Growth of Highly Uniform 2D Transition Metal Dichalcogenides

5. Dissolution-precipitation growth of uniform and clean two dimensional transition metal dichalcogenides

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