Imaging Atomic-Scale Clustering in III–V Semiconductor Alloys-Reference-Cited by-同舟云学术

Imaging Atomic-Scale Clustering in III–V Semiconductor Alloys

Published:2017-03-16 Issue:3 Volume:11 Page:2734-2741
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Hirst Louise C.¹^ORCID,Kotulak Nicole A.¹^ORCID,Tomasulo Stephanie¹,Abell Josh¹,González María²,Yakes Michael K.¹,Meyer Jerry R.¹,Walters Robert J.¹,Song Cheng Yu³,Specht Petra⁴,Ercius Peter³,Kisielowski Christian³

Affiliation:

1. U.S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC 20375, United States

2. Sotera Defense Solutions, Inc., Annapolis Junction, Maryland 20701-1067, United States

3. The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

4. University of California, Berkeley, California 94720, United States

Funder

U.S. Department of Energy

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.6b07732

Reference43 articles.

1. Miscibility gaps in quaternary III/V alloys

2. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation

3. Orientation-dependent phase separation of GaAsSb epilayers grown by gas-source molecular-beam epitaxy

4. Sb surface segregation effect on the phase separation of MBE grown InAsSb

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