Nanometer-Scale Ge-Based Adaptable Transistors Providing Programmable Negative Differential Resistance Enabling Multivalued Logic-Reference-Cited by-同舟云学术

Nanometer-Scale Ge-Based Adaptable Transistors Providing Programmable Negative Differential Resistance Enabling Multivalued Logic

Published:2021-10-27 Issue:11 Volume:15 Page:18135-18141
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Sistani Masiar¹^ORCID,Böckle Raphael¹,Falkensteiner David¹,Luong Minh Anh²^ORCID,den Hertog Martien I.³^ORCID,Lugstein Alois¹^ORCID,Weber Walter M.¹^ORCID

Affiliation:

1. Institute of Solid State Electronics, TU Wien, 1040 Vienna, Austria

2. University Grenoble Alpes, CEA, IRIG-DEPHY-MEM-LEMMA, F-38000 Grenoble, France

3. Institut NEEL CNRS/UGA UPR2940, F-38042 Grenoble, France

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.1c06801

Reference54 articles.

1. Reconfigurable nanowire electronics – A review

2. State of the Art and Future Perspectives in Advanced CMOS Technology

3. Reconfigurable Silicon Nanowire Transistors

4. Multimode Silicon Nanowire Transistors

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