Hysteresis in Carbon Nanotube Transistors: Measurement and Analysis of Trap Density, Energy Level, and Spatial Distribution
Author:
Affiliation:
1. Department of Electrical Engineering and Stanford SystemX Alliance, Stanford University, Stanford, California 94305, United States
2. Department of Computer Science, Stanford University, Stanford, California 94305, United States
Funder
Stanford University
Intel Corporation
Semiconductor Research Corporation
Hertz Foundation
National Science Foundation
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsnano.6b00792
Reference45 articles.
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