Atomic Scale Microstructure and Properties of Se-Deficient Two-Dimensional MoSe2-Reference-Cited by-同舟云学术

Atomic Scale Microstructure and Properties of Se-Deficient Two-Dimensional MoSe2

Published:2015-03-11 Issue:3 Volume:9 Page:3274-3283
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Lehtinen Ossi¹,Komsa Hannu-Pekka²,Pulkin Artem³,Whitwick Michael Brian⁴,Chen Ming-Wei⁴,Lehnert Tibor¹,Mohn Michael J.¹,Yazyev Oleg V.³,Kis Andras⁴,Kaiser Ute¹,Krasheninnikov Arkady V.⁵

Affiliation:

1. Group of Electron Microscopy of Materials Science, Central Facility for Electron Microscopy, University of Ulm, 89081 Ulm, Germany

2. COMP Centre of Excellence, Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto, Finland

3. Institute of Theoretical Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

4. Electrical Engineering Institute, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

5. Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto, Finland

Funder

European Research Council

Schweizerische Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Deutsche Forschungsgemeinschaft

Suomen Akatemia

Ministerium für Wissenschaft, Forschung und Kunst Baden-Württemberg

Suomen Kulttuurirahasto

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b00410

Reference58 articles.

1. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

2. Synthesis of Monolayer Hexagonal Boron Nitride on Cu Foil Using Chemical Vapor Deposition

3. Large-Area Vapor-Phase Growth and Characterization of MoS2Atomic Layers on a SiO2Substrate

4. van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates

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