Scalable Top-Down Approach Tailored by Interferometric Lithography to Achieve Large-Area Single-Mode GaN Nanowire Laser Arrays on Sapphire Substrate-Reference-Cited by-同舟云学术

Scalable Top-Down Approach Tailored by Interferometric Lithography to Achieve Large-Area Single-Mode GaN Nanowire Laser Arrays on Sapphire Substrate

Published:2018-02-05 Issue:3 Volume:12 Page:2373-2380
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Behzadirad Mahmoud¹²^ORCID,Nami Mohsen¹²^ORCID,Wostbrock Neal¹³,Zamani Kouhpanji Mohammad Reza¹⁴,Feezell Daniel F.¹⁴,Brueck Steven R. J.¹⁴,Busani Tito¹⁴

Affiliation:

1. Center for High Technology Materials (CHTM), University of New Mexico, MSC01 04-2710, 1313 Goddard SE, Albuquerque, New Mexico 87106-4343, United States

2. Department of Physics and Astronomy, University of New Mexico, 1919 Lomas Boulevard NE, Albuquerque, New Mexico 87131, United States

3. Nanoscience and Microsystem (NSMS) Engineering, 210 University Boulevard NE, Albuquerque, New Mexico 82131, United States

4. Electrical and Computer Engineering (ECE), University of New Mexico, MSC01 11001, Albuquerque, New Mexico 87131-0001, United States

Funder

Division of Engineering Education and Centers

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.7b07653

Reference41 articles.

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