Precursor-Confined Chemical Vapor Deposition of 2D Single-Crystalline SexTe1–x Nanosheets for p-Type Transistors and Inverters-Reference-Cited by-同舟云学术

Precursor-Confined Chemical Vapor Deposition of 2D Single-Crystalline Se_xTe_1–x Nanosheets for p-Type Transistors and Inverters

Published:2024-06-17 Issue:26 Volume:18 Page:17293-17303
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Huang Haoxin¹,Zha Jiajia²,Xu Songcen³,Yang Peng⁴,Xia Yunpeng¹,Wang Huide⁵,Dong Dechen²,Zheng Long⁶,Yao Yao⁷,Zhang Yuxuan⁸,Chen Ye⁶^ORCID,Ho Johnny C.⁸^ORCID,Chan Hau Ping¹,Zhao Chunsong⁹,Tan Chaoliang²^ORCID

Affiliation:

1. Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, China

2. Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong SAR, China

3. Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong SAR, China

4. College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, China

5. College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China

6. Department of Chemistry, The Chinese University of Hong Kong, Hong Kong SAR, China

7. Department of Chemistry, City University of Hong Kong, Hong Kong SAR, China

8. Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, China

9. Huawei Technologies Co., LTD., Shenzhen 518129, China

Funder

Research Grants Council, University Grants Committee

Science, Technology and Innovation Commission of Shenzhen Municipality

National Natural Science Foundation of China

Electrotechnical Certification Scheme

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.4c05323

Reference55 articles.

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4. The Roadmap of 2D Materials and Devices Toward Chips

5. Jiang, J.; Parto, K.; Cao, W.; Banerjee, K. Monolithic-3D Integration with 2D Materials: Toward Ultimate Vertically-Scaled 3D-ICs, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2018; pp 1–3.

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