Direct Growth of Bilayer Graphene on SiO2 Substrates by Carbon Diffusion through Nickel-Reference-Cited by-同舟云学术

Direct Growth of Bilayer Graphene on SiO2 Substrates by Carbon Diffusion through Nickel

Published:2011-09-14 Issue:10 Volume:5 Page:8241-8247
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Peng Zhiwei¹,Yan Zheng¹,Sun Zhengzong¹,Tour James M.¹

Affiliation:

1. Department of Chemistry, ‡Department of Mechanical Engineering and Materials Science, and the §Richard E. Smalley Institute for Nanoscale Science and Technology, Rice University, 6100 Main Street, Houston, Texas 77005, United States.

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn202923y

Reference33 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. The rise of graphene

3. Two-dimensional gas of massless Dirac fermions in graphene

4. Experimental observation of the quantum Hall effect and Berry's phase in graphene

5. The electronic properties of graphene

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