High Responsivity and External Quantum Efficiency Photodetectors Based on Solution-Processed Ni-Doped CuO Films-Reference-Cited by-同舟云学术

High Responsivity and External Quantum Efficiency Photodetectors Based on Solution-Processed Ni-Doped CuO Films

Published:2020-02-18 Issue:10 Volume:12 Page:11797-11805
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Yin Wenlei¹,Yang Jiayan¹,Zhao Keyang¹,Cui Anyang¹,Zhou Jiaoyan¹,Tian Wei²^ORCID,Li Wenwu¹³^ORCID,Hu Zhigao¹³^ORCID,Chu Junhao¹³

Affiliation:

1. Engineering Research Center of Nanophotonics & Advanced Instrument (MOE), Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China

2. School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China

3. Shanghai Institute of Intelligent Electronics and Systems, Fudan University, Shanghai 200433, China

Funder

Ministry of Education of the People's Republic of China

Ministry of Science and Technology of the People's Republic of China

Science and Technology Commission of Shanghai Municipality

National Natural Science Foundation of China

Shanghai Municipality

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b18663

Reference43 articles.

1. Nanoscale ultraviolet photodetectors based on onedimensional metal oxide nanostructures

2. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

3. Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials

4. Solution-processable metal oxide semiconductors for thin-film transistor applications

5. Annealing time modulated the film microstructures and electrical properties of P-type CuO field effect transistors

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