Rectification Ratio and Tunneling Decay Coefficient Depend on the Contact Geometry Revealed by in Situ Imaging of the Formation of EGaIn Junctions-Reference-Cited by-同舟云学术

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Rectification Ratio and Tunneling Decay Coefficient Depend on the Contact Geometry Revealed by in Situ Imaging of the Formation of EGaIn Junctions

Published:2019-05-22 Issue:23 Volume:11 Page:21018-21029
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Chen Xiaoping¹,Hu Hongting¹,Trasobares Jorge¹^ORCID,Nijhuis Christian A.¹²^ORCID

Affiliation:

1. Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore

2. Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore

Funder

Ministry of Education - Singapore

National Research Foundation Singapore

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b02033

Reference70 articles.

1. Electrical conduction through single molecules and self-assembled monolayers

2. Large-Area, Ensemble Molecular Electronics: Motivation and Challenges

3. A New Approach for Molecular Electronic Junctions with a Multilayer Graphene Electrode

4. Molecular-Scale Electronics: From Concept to Function

5. High-Yield Functional Molecular Electronic Devices

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3. Resolving charge transfer mechanisms in molecular tunnel junctions using dynamic charge transfer and static current–voltage measurements;Journal of Materials Chemistry C;2024

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5. Plasmon‐Molecule Interactions in Single‐Molecule Junctions;ChemPlusChem;2023-12-19

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