Charge Separation in Epitaxial SnS/MoS2 Vertical Heterojunctions Grown by Low-Temperature Pulsed MOCVD-Reference-Cited by-同舟云学术

Charge Separation in Epitaxial SnS/MoS2 Vertical Heterojunctions Grown by Low-Temperature Pulsed MOCVD

Published:2019-10-01 Issue:43 Volume:11 Page:40543-40550
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Olding Jack N.¹^ORCID,Henning Alex²^ORCID,Dong Jason T.²,Zhou Qunfei³⁴^ORCID,Moody Michael J.²,Smeets Paul J. M.²⁵^ORCID,Darancet Pierre³⁴^ORCID,Weiss Emily A.¹²⁶^ORCID,Lauhon Lincoln J.¹²^ORCID

Affiliation:

1. Applied Physics Graduate Program, Northwestern University, Evanston, Illinois 60208, United States

2. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States

3. Materials Research Science and Engineering Center, Northwestern University, Evanston, Illinois 60208, United States

4. Center for Nanoscale Materials, Argonne National Laboratory, 9700 South Cass Avenue, Lemont, Illinois 60439, United States

5. NUANCE Center, Northwestern University, Evanston, Illinois 60208, United States

6. Department of Chemistry, Northwestern University, Evanston, Illinois 60208-3113, United States

Funder

Deutsche Forschungsgemeinschaft

Northwestern University Materials Science and Engineering Center

Northwestern University International Institute for Nanotechnology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b14412

Reference53 articles.

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