High-Performance Nanofloating Gate Memory Based on Lead Halide Perovskite Nanocrystals-Reference-Cited by-同舟云学术

High-Performance Nanofloating Gate Memory Based on Lead Halide Perovskite Nanocrystals

Published:2019-06-12 Issue:27 Volume:11 Page:24367-24376
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Jiang Tianhao¹,Shao Zhibin¹^ORCID,Fang Huan¹,Wang Wei¹,Zhang Qiao¹^ORCID,Wu Di²^ORCID,Zhang Xiujuan¹,Jie Jiansheng¹^ORCID

Affiliation:

1. Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China

2. School of Physics and Engineering, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, P. R. China

Funder

State Administration of Foreign Experts Affairs

Ministry of Education of the People's Republic of China

Ministry of Science and Technology of the People's Republic of China

China Postdoctoral Science Foundation

Government of Jiangsu Province

National Natural Science Foundation of China

Priority Academic Program Development of Jiangsu Higher Education Institutions

Publisher

American Chemical Society (ACS)

Subject

General Materials Science