Electrochemical Deposition of ZnSe from Dimethyl Sulfoxide Solution and Characterization of Epitaxial Growth-Reference-Cited by-同舟云学术

Electrochemical Deposition of ZnSe from Dimethyl Sulfoxide Solution and Characterization of Epitaxial Growth

Published:2004-08-11 Issue:35 Volume:108 Page:13191-13199
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Henríquez R.¹,Gómez H.¹,Riveros G.¹,Guillemoles J. F.¹,Froment M.¹,Lincot D.¹

Affiliation:

1. Laboratoire d'Electrochimie et Chimie Analytique (UMR CNRS 7575), Ecole Nationale Supérieure de Chimie de Paris, 11 Pierre et Marie Curie, 75321 Paris CEDEX 05, France, Instituto de Química, Facultad de Ciencias Básicas y Matemáticas, Universidad Católica de Valparaíso, Casilla 4059, Valparaíso, Chile, and Laboratoire de Physique des Liquides et Electrochimie (UPR 15 CNRS), Université Pierre et Marie Curie, 4 Place Jussieu, 75252 Paris CEDEX 05, France

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp0486191

Reference31 articles.

1. Low stacking-fault density in ZnSe epilayers directly grown on epi-ready GaAs substrates without GaAs buffer layers

2. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

3. Electrodeposition of CdZnSe thin films from selenosulphite solutions

4. Reduction of the ZnSe/GaAs(100) valence band offset by a Te interlayer

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