Graphene Spin-Valve Device Grown Epitaxially on the Ni(111) Substrate: A First Principles Study-Reference-Cited by-同舟云学术

Graphene Spin-Valve Device Grown Epitaxially on the Ni(111) Substrate: A First Principles Study

Published:2011-03-10 Issue:13 Volume:115 Page:6019-6023
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Cho Yeonchoo¹,Choi Young Cheol¹,Kim Kwang S.¹

Affiliation:

1. Center for Superfunctional Materials, Department of Chemistry, Pohang University of Science and Technology, San 31, Hyojadong, Namgu, Pohang 790-784, Korea

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp111504q

Reference35 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Two-dimensional gas of massless Dirac fermions in graphene

3. Experimental observation of the quantum Hall effect and Berry's phase in graphene

4. Graphene Spin Valve Devices

5. Half-metallic graphene nanoribbons

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