Bending Strain-Tailored Magnetic and Electronic Transport Properties of Reactively Sputtered γ′-Fe4N/Muscovite Epitaxial Heterostructures toward Flexible Spintronics-Reference-Cited by-同舟云学术

Bending Strain-Tailored Magnetic and Electronic Transport Properties of Reactively Sputtered γ′-Fe4N/Muscovite Epitaxial Heterostructures toward Flexible Spintronics

Published:2020-05-28 Issue:24 Volume:12 Page:27394-27404
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Shi Xiaohui¹,Wu Mei²,Lai Zhengxun¹,Li Xujing³,Gao Peng²³^ORCID,Mi Wenbo¹^ORCID

Affiliation:

1. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China

2. International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China

3. Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c08042

Reference72 articles.

1. Recent progress on flexible inorganic single-crystalline functional oxide films for advanced electronics