Control of the Mechanical Adhesion of III–V Materials Grown on Layered h-BN-Reference-Cited by-同舟云学术

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Control of the Mechanical Adhesion of III–V Materials Grown on Layered h-BN

Published:2020-11-25 Issue:49 Volume:12 Page:55460-55466
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Vuong Phuong¹^ORCID,Sundaram Suresh¹²,Mballo Adama¹,Patriarche Gilles³,Leone Stefano⁴,Benkhelifa Fouad⁴,Karrakchou Soufiane¹²,Moudakir Tarik⁵,Gautier Simon⁵,Voss Paul L.¹²,Salvestrini Jean-Paul¹²^ORCID,Ougazzaden Abdallah¹²^ORCID

Affiliation:

1. Georgia Tech−CNRS, UMI 2958, Georgia Tech Lorraine, 57070 Metz, France

2. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

3. Centre de Nanosciences et de Nanotechnologies, Université Paris-Saclay, C2N—Site de Marcoussis, Route de Nozay, F-91460 Marcoussis, France

4. Fraunhofer IAF, Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany

5. Institut Lafayette, 2 rue Marconi, 57070 Metz, France

Funder

Agence Nationale de la Recherche

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c16850

Reference37 articles.

1. Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

2. Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

3. Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

4. Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications

5. Transferrable AlGaN/GaN High-Electron Mobility Transistors to Arbitrary Substrates via a Two-Dimensional Boron Nitride Release Layer

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Controlled exfoliation of wafer-scale single-crystalline AlN film on MOCVD-grown layered h-BN;Applied Physics Letters;2024-04-29

2. Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO₂/Si(100) for Monolithic Optoelectronic Integration;Advanced Science;2024-03-22

3. Wafer‐Scale Transferrable GaN Enabled by Hexagonal Boron Nitride for Flexible Light‐Emitting Diode;Small;2023-10-06

4. Comparative coherence between layered and traditional semiconductors: unique opportunities for heterogeneous integration;International Journal of Extreme Manufacturing;2023-07-25

5. Spalling induced van der Waals lift-off and transfer of 4-in. GaN epitaxial films;Journal of Applied Physics;2023-07-14

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