Stepwise Growth of Ultrathin SiOx Films on Si(100) Surfaces through Sequential Adsorption/Oxidation Cycles of Alkylsiloxane Monolayers
Author:
Affiliation:
1. Department of Inorganic Chemistry, Technical University of Vienna, Getreidemarkt 9, A-1060 Wien, Austria
Publisher
American Chemical Society (ACS)
Subject
Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/la960395t
Reference25 articles.
1. Low-Dimensional Electronic Systems
2. Atomic layer growth of SiO2 on Si(100) using SiCl4 and H2O in a binary reaction sequence
3. A Room Temperature Method for the Preparation of Ultrathin SiOx Films from Langmuir-Blodgett Layers
4. Layer-by-Layer Construction of SiOx Film on Oxide Semiconductors
5. Photoinduced Oxidation of Methylsiloxane Monolayers Chemisorbed on TiO2
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