Adsorption and Reaction of Si2H5 on Clean and H-Covered Si(100)-(2 × 1) Surfaces: A Computational Study-Reference-Cited by-同舟云学术

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Adsorption and Reaction of Si2H5 on Clean and H-Covered Si(100)-(2 × 1) Surfaces: A Computational Study

Published:2011-07-15 Issue:31 Volume:115 Page:15369-15374
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Chen Hsin-Tsung¹,Hwang Chi-Chuan²,Chiang Hsing-Jung³,Chang Jee-Gong³

Affiliation:

1. Department of Chemistry, Chung Yuan Christian University, Chungli 32023, Taiwan

2. Department of Engineering Science, National Cheng-Kung University, Tainan, 701, Taiwan

3. National Center for High-Performance Computing, No. 28, Nan-Ke Third Road,Hsin-Shi, Tainan, 74147, Taiwan

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp201997x

Reference38 articles.

1. Thin-Film Silicon –Growth Process and Solar Cell Application–

2. Plasma Anodic Oxidation of InP

3. Optical and electrical properties of amorphous silicon films prepared by photochemical vapor deposition

4. Comparison of a-Si TFTs fabricated by Cat-CVD and PECVD methods

5. Ultrafast deposition of silicon nitride and semiconductor silicon thin films by hot wire chemical vapor deposition

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ab Initio Study of Growth Mechanism of 4H–SiC: Adsorption and Surface Reaction of C2H2, C2H4, CH4, and CH3;The Journal of Physical Chemistry C;2017-01-10

2. A computational study on the adsorption configurations and reactions of SiHx(x = 1-4) on clean and H-covered Si(100) surfaces;Applied Surface Science;2016-11

3. Computational Study for Reactions of H Atoms with Adsorbed SiH3 and Si2H5 on H-Covered Si(100)-(2 × 1) Surface;The Journal of Physical Chemistry C;2014-08-22

4. Different Crystal Growth Mechanisms of Si(001)-(2 × 1):H during Plasma-Enhanced Chemical Vapor Deposition of SiH3 and SiH2 Radicals: Tight-Binding Quantum Chemical Molecular Dynamics Simulations;The Journal of Physical Chemistry C;2013-07-22

5. Development of Crystal Growth Simulator Based on Tight-Binding Quantum Chemical Molecular Dynamics Method and Its Application to Silicon Chemical Vapor Deposition Processes;The Journal of Physical Chemistry C;2012-06-01

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