High and Balanced Hole and Electron Mobilities from Ambipolar Thin-Film Transistors Based on Nitrogen-Containing Oligoacences-Reference-Cited by-同舟云学术

High and Balanced Hole and Electron Mobilities from Ambipolar Thin-Film Transistors Based on Nitrogen-Containing Oligoacences

Published:2010-10-27 Issue:46 Volume:132 Page:16349-16351
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Liu Yi-Yang¹,Song Cheng-Li¹,Zeng Wei-Jing¹,Zhou Kai-Ge¹,Shi Zi-Fa¹,Ma Chong-Bo¹,Yang Feng¹,Zhang Hao-Li¹,Gong Xiong¹

Affiliation:

1. State Key Laboratory of Applied Organic Chemistry (SKLAOC), College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou, 730000, China, and Department of Polymer Engineering, College of Polymer Science and Engineering, The University of Akron, Akron, Ohio 44236, United States

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/ja107046s

Reference26 articles.

1. Charge Transport in Organic Semiconductors

2. Functionalized Acenes and Heteroacenes for Organic Electronics

3. Tetrathiafulvalenes, Oligoacenenes, and Their Buckminsterfullerene Derivatives: The Brick and Mortar of Organic Electronics

4. Organic Semiconducting Oligomers for Use in Thin Film Transistors

5. High-Performance Organic Field-Effect Transistors: Molecular Design, Device Fabrication, and Physical Properties

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