Reduction of Incubation Period by Employing OH-Terminated Si(001) Substrates in the Atomic Layer Deposition of Al2O3-Reference-Cited by-同舟云学术

Reduction of Incubation Period by Employing OH-Terminated Si(001) Substrates in the Atomic Layer Deposition of Al2O3

Published:2004-09-01 Issue:39 Volume:108 Page:15128-15132
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Lee Sun S.¹,Baik Jae Y.¹,An Ki-Seok¹,Suh Yung D.¹,Oh Jin-Ho¹,Kim Yunsoo¹

Affiliation:

1. Thin Film Materials Laboratory, Advanced Materials Division, and Precision Chemical Technology Laboratory, Advanced Chemical Technology Division, Korea Research Institute of Chemical Technology, Yuseong P.O. Box 107, Daejeon 305-600, Korea, and Surface Analysis Laboratory, Nano-Surface Group, Korea Research Institute of Standards and Science, Yuseong P.O. Box 102, Daejeon 305-600, Korea

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp048038b

Reference37 articles.

1. Structure and stability of ultrathin zirconium oxide layers on Si(001)

2. Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition

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