Origin of Leakage Currents and Nanowire-to-Nanowire Inhomogeneity in Radial p–i–n Junction GaAs Nanowire Array Solar Cells on Si-Reference-Cited by-同舟云学术

Origin of Leakage Currents and Nanowire-to-Nanowire Inhomogeneity in Radial p–i–n Junction GaAs Nanowire Array Solar Cells on Si

Published:2023-07-21 Issue:15 Volume:6 Page:14103-14113
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Mukherjee Anjan¹,Ren Dingding¹,Mosberg Aleksander Buseth²^ORCID,Vullum Per-Erik³,van Helvoort Antonius T. J.²^ORCID,Fimland Bjørn-Ove¹,Weman Helge¹^ORCID

Affiliation:

1. Department of Electronic Systems, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway

2. Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway

3. SINTEF Industry, NO-7465 Trondheim, Norway

Funder

Norges Forskningsr?d

Norwegian Micro- and Nano-Fabrication Facility, NorFab

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.3c02031

Reference45 articles.

1. InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

2. III-V nanowire photovoltaics: Review of design for high efficiency

3. Towards high efficiency nanowire solar cells

4. Nanowires for energy: A review

5. A GaAs Nanowire Array Solar Cell With 15.3% Efficiency at 1 Sun

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of the preparation conditions of GaAs nanowires in MBE on their optical properties;Journal of Physics: Conference Series;2024-06-01

2. Absorption of Light in Vertical III-V Semiconductor Nanowires for Solar Cell and Photodetector Applications;Crystals;2023-08-22