Sequential Growth of InP Quantum Dots and Coordination between Interfacial Heterovalency and Shell Confinement: Implication for Light-Emitting Devices-Reference-Cited by-同舟云学术

Sequential Growth of InP Quantum Dots and Coordination between Interfacial Heterovalency and Shell Confinement: Implication for Light-Emitting Devices

Published:2023-12-28 Issue:1 Volume:7 Page:1181-1190
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Cui Zhongjie¹^ORCID,Qin Shuaitao¹,He Haiyang¹,Wen Zhuoqi²,Yang Dan¹,Piao Zhiyan¹,Mei Shiliang¹^ORCID,Zhang Wanlu¹,Guo Ruiqian¹²³⁴^ORCID

Affiliation:

1. Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai, 200433, China

2. Institute of Future Lighting, Academy for Engineering and Technology, Fudan University, Shanghai, 200433, China

3. Zhongshan-Fudan Joint Innovation Center, Zhongshan, 528437, China

4. Yiwu Research Institute of Fudan University, Chengbei Road, Yiwu City, Zhejiang 322000, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Zhongshan-Fudan Joint innovation Center

Jihua Laboratory Projects of Guangdong Province

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.3c05167

Reference68 articles.

1. Synthesis and characterization of nearly monodisperse CdE (E = sulfur, selenium, tellurium) semiconductor nanocrystallites

2. Semiconductor quantum dots: Technological progress and future challenges

3. Building devices from colloidal quantum dots

4. High-efficiency light-emitting devices based on quantum dots with tailored nanostructures

5. Highly efficient and stable InP/ZnSe/ZnS quantum dot light-emitting diodes

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