Enhanced Carrier Mobility by Doping NaCl in a Hole-Transport Layer for Electroluminescent Quantum Dots Light-Emitting Diodes-Reference-Cited by-同舟云学术

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Enhanced Carrier Mobility by Doping NaCl in a Hole-Transport Layer for Electroluminescent Quantum Dots Light-Emitting Diodes

Published:2023-10-20 Issue:21 Volume:6 Page:20367-20374
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Yang Shuan¹,Hoang Minh-Son¹^ORCID,Chen Hsueh-Shih¹²³^ORCID

Affiliation:

1. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

2. College of Semiconductor Research, National Tsing Hua University, Hsinchu 30013, Taiwan

3. Department of Chemical Engineering and Materials Science, College of Engineering, Yuan Ze University, Taoyuan 32003, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Tsing-Yang Technology

HsinLight Inc.

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.3c04449

Reference45 articles.

1. Highly efficient and stable InP/ZnSe/ZnS quantum dot light-emitting diodes

2. Tuning the optical properties in CsPbBr3 quantum dot-doped glass by modulation of its network topology

3. Linear and nonlinear optical properties in spherical quantum dots: Inversely quadratic Hellmann potential

4. Thermal assisted up-conversion electroluminescence in quantum dot light emitting diodes

5. Direct Synthesis of Quantum Dots with Controllable Multimodal Size Distribution

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