Low-Voltage p- and n-Type Organic Self-Assembled Monolayer Field Effect Transistors-Reference-Cited by-同舟云学术

Low-Voltage p- and n-Type Organic Self-Assembled Monolayer Field Effect Transistors

Published:2010-12-06 Issue:1 Volume:11 Page:156-159
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Novak Michael¹,Ebel Alexander²,Meyer-Friedrichsen Timo³,Jedaa Abdesselam¹,Vieweg Benito F.⁴,Yang Guang⁴,Voitchovsky Kislon⁵,Stellacci Francesco⁵,Spiecker Erdmann⁴,Hirsch Andreas²,Halik Marcus¹

Affiliation:

1. Organic Materials and Devices (OMD), Department of Materials Science, University Erlangen-Nürnberg, Martensstrasse 07, 91058 Erlangen, Germany

2. Institute for Organic Chemistry II, University Erlangen-Nürnberg, Henkestrasse 42, 91054 Erlangen, Germany

3. H.C. Starck Clevios GmbH, Chempark Leverkusen B202, 51368 Leverkusen, Germany

4. Center for Nanoanalysis and Electron Microscopy (CENEM), Department of Materials Science, University Erlangen-Nürnberg, Cauerstrasse 6, 91058 Erlangen, Germany

5. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl103200r

Reference21 articles.

1. Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films

2. Nano-field effect transistor with an organic self-assembled monolayer as gate insulator

3. Low-voltage organic transistors with an amorphous molecular gate dielectric

4. Chemoresponsive monolayer transistors

5. Reversible Conductance Switching in Molecular Devices

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