Wavelength Modulation and Fast Response of Mixed-Phase β-Ga2O3:Zn/SnO2 in-Plane Heterojunction Ultraviolet Photodetectors-Reference-Cited by-同舟云学术

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Wavelength Modulation and Fast Response of Mixed-Phase β-Ga₂O₃:Zn/SnO₂ in-Plane Heterojunction Ultraviolet Photodetectors

Published:2024-08-16 Issue:34 Volume:16 Page:45156-45165
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Li Donglin¹,Deng Rui¹^ORCID,Li Yongfeng²^ORCID,Jiang Dayong¹

Affiliation:

1. School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China

2. Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, China

Funder

Jilin Provincial Scientific and Technological Development Program

Education Department of Jilin Province

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c07802

Reference42 articles.

1. Semiconductor ultraviolet detectors

2. Ultraviolet Communications: Potential and State-Of-The-Art

3. New concept ultraviolet photodetectors

4. Graphene-β -Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application

5. Gallium oxide solar-blind ultraviolet photodetectors: a review

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