High-Dimensional Physical Reservoir with Back-End-of-Line-Compatible Tin Monoxide Thin-Film Transistor-Reference-Cited by-同舟云学术

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High-Dimensional Physical Reservoir with Back-End-of-Line-Compatible Tin Monoxide Thin-Film Transistor

Published:2024-08-01 Issue:32 Volume:16 Page:42884-42893
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Mun Sahngik A.¹^ORCID,Jang Yoon Ho¹,Han Janguk¹,Shim Sung Keun¹,Kang Sukin¹,Lee Yonghee¹,Choi Jinheon¹,Cheong Sunwoo¹,Lee Soo Hyung¹,Ryoo Seung Kyu¹,Han Joon-Kyu²,Hwang Cheol Seong¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul 08826, Republic of Korea

2. System Semiconductor Engineering and Department of Electronic Engineering, Sogang University, 35 Baekbeom-ro, Mapo-gu, Seoul 04107, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c07747

Reference30 articles.

1. Jaeger, H. The “echo state” approach to analysing and training recurrent neural networks-with an erratum note. Bonn, Germany: German National Research Center for Information Technology GMD Technical Report 2001, 148(34), 13.

2. An experimental unification of reservoir computing methods

3. Chaotic Time Series Prediction Based on a Novel Robust Echo State Network

4. Electrocardiogram Classification Using Reservoir Computing With Logistic Regression

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