Stress-Driven Oxidation Chemistry of Wet Silicon Surfaces-Reference-Cited by-同舟云学术

Stress-Driven Oxidation Chemistry of Wet Silicon Surfaces

Published:2008-07-18 Issue:32 Volume:112 Page:12077-12080
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Colombi Ciacchi Lucio¹,Cole Daniel J.¹,Payne Mike C.¹,Gumbsch Peter¹

Affiliation:

1. Fraunhofer Institut für Werkstoffmechanik, Wöhlerstrasse 11, 79108 Freiburg, Germany, Institut für Zuverlässigkeit von Bauteilen and Systemen, Universität Karlsruhe, Kaiserstr. 12, 76131 Karlsruhe, Germany, and Theory of Condensed Matter Group, Cavendish Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp804078n

Reference34 articles.

1. A BioMEMS Review: MEMS Technology for Physiologically Integrated Devices

2. Immobilization of RGD to 〈111〉 silicon surfaces for enhanced cell adhesion and proliferation

3. Dissolution of different forms of partially porous silicon wafers under simulated physiological conditions

4. Etch-pit initiation by dissolved oxygen on terraces of H-Si(111)

5. Measuring the Site-Specific Reactivity of Impurities: The Pronounced Effect of Dissolved Oxygen on Silicon Etching

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