Electrical Property of Mo-Doped VO2 Nanowire Array Film by Melting−Quenching Sol−Gel Method-Reference-Cited by-同舟云学术

Electrical Property of Mo-Doped VO2 Nanowire Array Film by Melting−Quenching Sol−Gel Method

Published:2006-09-06 Issue:39 Volume:110 Page:19083-19086
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Mai L. Q.¹,Hu B.¹,Hu T.¹,Chen W.¹,Gu E. D.¹

Affiliation:

1. School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, China, School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp0642701

Reference19 articles.

1. Metal–insulator transition of VO2 thin films grown on TiO2 (001) and (110) substrates

2. Effect of synthesis conditions on the metal-semiconductor phase transition in vanadium dioxide thin films

3. Phase transformation and semiconductor-metal transition in thin films of VO2 deposited by low-pressure metalorganic chemical vapor deposition

4. W- and F-doped VO 2 films studied by photoelectron spectrometry

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