Unveiling the Growth Mechanism of MoS2 with Chemical Vapor Deposition: From Two-Dimensional Planar Nucleation to Self-Seeding Nucleation
Author:
Affiliation:
1. College of Optical and Electronic Technology, China Jiliang University, 310018 Hangzhou, China
2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, 200083 Shanghai, China
Funder
National Natural Science Foundation of China
Shanghai Science and Technology Foundation
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.7b01486
Reference46 articles.
1. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
2. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
3. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
4. Layer-Dependent Dopant Stability and Magnetic Exchange Coupling of Iron-Doped MoS2 Nanosheets
5. The capacity fading mechanism and improvement of cycling stability in MoS2-based anode materials for lithium-ion batteries
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