Surfactant-Induced Alterations of Epitaxial Orientation in β-In2S3 Layers on InP
Author:
Affiliation:
1. Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e. V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.1c00756
Reference27 articles.
1. Wide Band Gap Chalcogenide Semiconductors
2. On the conduction mechanism in single crystal β-indium sulfide In2S3
3. Structure reinvestigation of α-, β- and γ-In2S3
4. In2S3 Quantum Dots: Preparation, Properties and Optoelectronic Application
5. Tailored indium sulfide-based materials for solar-energy conversion and utilization
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1. Comparative study of electrical properties of chalcogenide films produced by reaction of Cu, Ag, Ni and NiCu with Sb2S3 in hot wall epitaxy;Journal of Alloys and Compounds;2023-01
2. Effect of polycrystalline structure on the behavior of evaporated β-In2S3 thin films;Vacuum;2022-11
3. Comparative Study of Electrical Properties of Chalcogenide Films Produced by Reaction of Cu, Ag, Ni and Nicu with Sb2s3 in Hot Wall Epitaxy;SSRN Electronic Journal;2022
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