Atomic-Scale Phase Transition of Epitaxial GaN on Nanostructured Si(001): Activation and Beyond-Reference-Cited by-同舟云学术

Atomic-Scale Phase Transition of Epitaxial GaN on Nanostructured Si(001): Activation and Beyond

Published:2016-03-24 Issue:4 Volume:16 Page:2183-2189
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Lee S. C.¹²,Jiang Y.-B.¹²,Durniak M. T.¹²,Detchprohm T.¹²,Wetzel C.¹²,Brueck S. R. J.¹²

Affiliation:

1. Department of Electrical and Computer Engineering and Center for High Technology Materials and ‡Department of Earth and Planetary Sciences, University of New Mexico, Albuquerque, New Mexico 87106, United States

2. Department of Materials Science and Engineering and ∥Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, United States

Funder

New York State Foundation for Science, Technology and Innovation

European Research Council

Division of Engineering Education and Centers

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.5b01845

Reference25 articles.

1. Zinc-blende–wurtzite polytypism in semiconductors