Evidence for Facilitated Surface Transport during Ge Crystal Growth by Indium in Liquid Hg–In Alloys at Room Temperature-Reference-Cited by-同舟云学术

Evidence for Facilitated Surface Transport during Ge Crystal Growth by Indium in Liquid Hg–In Alloys at Room Temperature

Author:

Pattadar Dhruba¹,Cheek Quintin¹,Sartori Andrea²,Zhao Yifan¹,Giri Rajendra P.²,Murphy Bridget²³^ORCID,Magnussen Olaf²³^ORCID,Maldonado Stephen¹⁴^ORCID

Affiliation:

1. Department of Chemistry, University of Michigan, 930 N University, Ann Arbor, Michigan 48109-1055, United States

2. Institute for Experimental and Applied Physics, Kiel University, Leibnizstr. 11-19, D-24118 Kiel, Germany

3. Ruprecht Haensel Laboratory, Kiel University, D-24118 Kiel, Germany

4. Program in Applied Physics, University of Michigan, 930 N University, Ann Arbor, Michigan 48109-1055, United States

Funder

Directorate for Mathematical and Physical Sciences

Deutsche Forschungsgemeinschaft

German Federal Ministry for Science and Education

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

Reference88 articles.

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