Structural and Optical Properties of Disc-in-Wire InGaN/GaN LEDs
Author:
Affiliation:
1. Materials Measurement Science Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, Maryland 20899, United States
Funder
Division of Materials Research
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/nl503826k
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3. Growth of Self-Organized GaN Nanostructures on $\bf Al_{2}O_{3}(0001)$ by RF-Radical Source Molecular Beam Epitaxy
4. Structural characterization of GaN grown by hydrogen-assisted ECR-MBE using electron microscopy
5. Molecular beam epitaxy growth and doping of III-nitrides on Si(111): layer morphology and doping efficiency
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